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| ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.045 DESCRIPTION ID= 5.1A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package SOT223 APPLICATIONS * DC - DC Converters * Power Management Functions * Relay and Solenoid driving * Motor control ORDERING INFORMATION DEVICE ZXMN6A09GTA ZXMN6A09GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING * ZXMN 6A09 Top View PROVISIONAL ISSUE D - SEPTEMBER 2003 1 SEMICONDUCTORS ZXMN6A09G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25C) (b) (V GS =10V; T A =70C) (b) (V GS =10V; T A =25C) (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a)(d) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 60 20 6.9 5.6 5.0 30.6 3.5 30.6 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient (a)(d) (b)(d) SYMBOL R JA R JA VALUE 62.5 32.2 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS 2 ZXMN6A09G CHARACTERISTICS PROVISIONAL ISSUE D - SEPTEMBER 2003 3 SEMICONDUCTORS ZXMN6A09G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.85 26.3 26.6 0.95 V ns nC T J =25C, I S =6.6A, V GS =0V T J =25C, I F =3.5A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 4.9 5.0 25.3 4.6 12.4 24.2 5.2 3.5 ns ns ns ns nC nC nC nC V DS =15V,V GS =10V, I D =3.5A V DD =15V, I D =3.5A R G 6.0, V GS =10V (refer to test circuit) V DS =15V,V GS =5V, I D =3.5A C iss C oss C rss 1407 121 59 pF pF pF V DS =40 V, V GS =0V, f=1MHz V (BR)DSS 60 I DSS I GSS V GS(th) R DS(on) g fs 15 1.0 0.045 0.070 1 100 V A nA V S I D =250A, V GS =0V V DS =60V, V GS =0V V GS =20V, V DS =0V I =250A, VDS= VGS D V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A V DS =15V,I D =8.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS 4 ZXMN6A09G TYPICAL CHARACTERISTICS PROVISIONAL ISSUE D - SEPTEMBER 2003 5 SEMICONDUCTORS ZXMN6A09G PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS 6 ZXMN6A09G PACKAGE OUTLINE PAD LAYOUT DETAILS 4.6 2.0 min (3x) 2.3 6.8 1.5 min (3x) 2.0 min 3.8 min PACKAGE DIMENSIONS MILLIMETRES DIM MIN A A1 A2 b b2 C 0.02 1.55 0.66 2.90 0.23 MAX 1.80 0.10 1.65 0.84 3.10 0.33 D e e1 E E1 L DIM MIN 6.30 MAX 6.70 MILLIMETRES 2.30 BASIC 4.60 BASIC 6.70 3.30 0.90 7.30 3.70 (c) Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE D - SEPTEMBER 2003 7 SEMICONDUCTORS |
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